2n3819 Transistor

2n3819 Transistor Datasheet Pdf
2n3819 Transistor Datasheet
2n3819 Transistor Datasheet
2n3819 Transistor Equivalent
2n3055 Transistor Substitute

Type Designator: 2N3819

The main component of this project is the 2N3819 Field-effect transistor or FET. It is a kind of transistor that uses the electric field to control the flow of current. This is a very interesting and simple project of a highly sensitive static electricity detector circuit, it. 2N3819 PBFREE Central Semiconductor RF JFET Transistors N-CH -25V 10mA BULK 25Vgs 360mW 8pF datasheet, inventory, & pricing.

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.35 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 0.05 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 300 Ohm

Package: TO92

2N3819 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N3819 Datasheet (PDF)

0.1. 2n3819-p.pdf Size:65K _philips

2n3819 Transistor Datasheet Pdf

0.2. 2n3819.pdf Size:29K _fairchild_semi

2n3819 Transistor Datasheet

2N3819N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced from process 50.TO-9211. Drain 2. Gate 3. SourceEpitaxial Silicon TransistorAbsolute Maximum Ratings* TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 25

0.3. 2n3819 2.pdf Size:53K _vishay

2N3819Vishay SiliconixN-Channel JFETPRODUCT SUMMARYVGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)v 8 25 2 2FEATURES BENEFITS APPLICATIONSD Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/MixerGps 11 dB @ 400 MHzD Very High System Sensitivity D OscillatorD Very Low Noise: 3 dB @ 400 MHzD High Quality of Amplification D Sample-a

0.4. 2n3819.pdf Size:170K _onsemi

2N3819JFET VHF/UHF AmplifierNChannel DepletionMAXIMUM RATINGShttp://onsemi.comRating Symbol Value UnitDrainSource Voltage VDS 25 Vdc3 DRAINDrainGate Voltage VDG 25 VdcGateSource Voltage VGS 25 Vdc2Drain Current ID 100 mAdcGATEForward Gate Current IG(f) 10 mAdcTotal Device Dissipation PD1 SOURCE@ TA = 25C 350 mWDerate above 25C 2.8 mW/CSt

2n3819 Transistor Datasheet

Datasheet: AP3R604AGH-HF, AP3R604GH-HF, AP3R604GMT-HF, AP4002H, AP4002I-HF, AP4002J, AP4002P, AP4002S, 2N7002, 2SK427, 2SK429S, 2SK429L, 2SK439, 2SK443, 2SK444, 2SK445, 2SK447.

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2n3819 Transistor Equivalent

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2n3055 Transistor Substitute